Material for photoelectric conversion element for use in imaging element, and photoelectric conversion element including same

ABSTRACT

The present invention provides a material for photoelectric conversion elements for use in imaging elements which comprises a compound represented by the following formula (1). The material for photoelectric conversion elements for use in imaging elements, which comprises a compound represented by the following formula (1), is used to produce a photoelectric conversion element which is excellent in terms of hole- or electron-leakage prevention, thermal resistance to processing temperatures, transparency to visible light, etc. (In formula (1), R 1  and R 2  each independently represent a substituted or unsubstituted aromatic group.)

TECHNICAL FIELD

The present invention relates to a photoelectric conversion element, animaging element, a photosensor, and a material for a photoelectricconversion element for use in an imaging element which is used for thesedevices.

BACKGROUND ART

In recent years, organic electronic devices have received growingattention. Examples of their features include flexible structures,possible large areas, and inexpensive and high-speed printing methodsavailable in electronic device manufacturing processes. Typical examplesof the devices include organic EL elements, organic solar cell elements,organic photoelectric conversion elements, and organic transistorelements. The organic EL elements are expected as main targets fornext-generation display purposes as flat panel displays and applied tomobile phone displays, TV, etc. The organic EL elements are still underdevelopment with the aim of higher functionalization. Research anddevelopment are ongoing as to the organic solar cell elements, etc., asflexible and inexpensive energy sources, and the organic transistorelements, etc., as flexible displays or inexpensive IC.

For the development of the organic electronic devices, it is veryimportant to develop materials constituting the devices. Therefore, alarge number of materials have been studied in each field. Nonetheless,such materials do not have sufficient performance, and materials usefulfor various devices are still being developed energetically. Amongothers, compounds having a benzothienobenzothiophene backbone have beendeveloped as organic electronic materials. Among these compounds, acompound having a phenylbenzothienobenzothiophene backbone has also beenreported as an organic transistor (Non Patent Literature 1 and PatentLiterature 1) and has been reported to be applied to, particularly, avertical transistor element (Patent Literature 2).

Meanwhile, in recent organic electronics, the organic photoelectricconversion elements are expected to be expanded to next-generationimaging elements, and some groups have made reports thereon. Examples ofsuch cases include use of a quinacridone derivative or a quinazolinederivative in a photoelectric conversion element (Patent Literature 3),application of a photoelectric conversion element containing aquinacridone derivative to an imaging element (Patent Literature 4), anduse of a diketopyrrolopyrroles derivative (Patent Literature 5). Ingeneral, it is considered that the performance of imaging elements isimproved by intended reduction in dark current for the purpose of highcontrasts and electric power saving. Thus, an approach of inserting ahole blocking layer or an electron blocking layer to between aphotoelectric conversion portion and an electrode portion is used fordecreasing leakage current from the photoelectric conversion portion inthe dark.

The hole blocking layer and the electron blocking layer are generallyused widely in the field of organic electronic devices. In filmsconstituting a device, each of the hole blocking layer and the electronblocking layer is disposed at the interface between an electrode or aconductive film and the other films, and has the function of controllingthe back transfer of holes or electrons. The hole blocking layer or theelectron blocking layer adjusts the leakage of unnecessary holes orelectrons and is selected for use in consideration of characteristicssuch as thermal resistance, transmitted wavelengths, and film formationmethods depending on the purpose of the device. However, the requiredperformance of materials, particularly, for photoelectric conversionelement purposes, is high, and existing hole blocking layers or electronblocking layers do not have sufficient performance in terms of leakagecurrent prevention properties, thermal resistance to processingtemperatures, transparency to visible light, etc., and are in short ofcommercial exploitation.

CITATION LIST Patent Literature

-   Patent Literature 1: International Publication No. NO 2006/077888-   Patent Literature 2: Japanese Patent Laid-Open No. 2010-232413-   Patent Literature 3: Japanese Patent No. 4972288-   Patent Literature 4: Japanese Patent No. 4945146-   Patent Literature 5: Japanese Patent No. 5022573-   Patent Literature 6: Japanese Patent Laid-Open No. 2008-290963

Non Patent Literature

-   Non Patent Literature 1: J. Am. Chem. Soc., 2006, 128 (39), 12604

SUMMARY OF INVENTION Technical Problem

The present invention has been made in light of these circumstances, andan object of the present invention is to provide various electronicdevices including a photoelectric conversion element which are excellentin hole- or electron-leak prevention properties, hole or electrontransport properties, thermal resistance to processing temperatures,transparency to visible light, etc.

Solution to Problem

The present inventors has conducted diligent studies to attain theobject and consequently completed the present invention by finding thatthe object is attained by applying a compound represented by the formula(1) given below to a photoelectric conversion element.

Specifically, the present invention is as follows:

[1] a material for a photoelectric conversion element for use in animaging element, comprising a compound represented by the followingformula (1):

wherein R₁ and R₂ each independently represent a substituted orunsubstituted aromatic group;[2] the material for a photoelectric conversion element for use in animaging element according to [1], wherein the compound of the formula(1) is a compound represented by the following formula (2):

wherein R₁ and R₂ are as defined in the formula (1) according to [1];[3] the material for a photoelectric conversion element for use in animaging element according to [1] or [2], wherein R₁ and R₂ in theformula (1) or the formula (2) are each independently a substituted orunsubstituted aromatic hydrocarbon group;[4] the material for a photoelectric conversion element for use in animaging element according to [3], wherein each of R₁ and R₂ in theformula (1) or the formula (2) is a substituted or unsubstituted phenylgroup;[5] the material for a photoelectric conversion element for use in animaging element according to [4], wherein each of R₁ and R₂ in theformula (1) or the formula (2) is a phenyl group having a substituted orunsubstituted aromatic hydrocarbon group;[6] the material for a photoelectric conversion element for use in animaging element according to [5], wherein each of R₁ and R₂ in theformula (1) or the formula (2) is a phenyl group having a substituted orunsubstituted phenyl group;[7] the material for a photoelectric conversion element for use in animaging element according to [6], wherein each of R₁ and R₂ in theformula (1) or the formula (2) is a phenyl group having a biphenylgroup;[8] the material for a photoelectric conversion element for use in animaging element according to [4], wherein each of R₁ and R₇ in theformula (1) or the formula (2) is a phenyl group having an alkyl grouphaving 1 to 12 carbon atoms;[9] the material for a photoelectric conversion element for use in animaging element according to [8], wherein each of R₁ and R₂ in theformula (1) or the formula (2) is a phenyl group having a methyl groupor an ethyl group;[10] a photoelectric conversion element for use in an imaging element,comprising a material for a photoelectric conversion element for use inan imaging element according to any one of [1] to [9];[11] a photoelectric conversion element for use in an imaging element,the photoelectric conversion element having (A) a first electrode film,(B) a second electrode film, and (C) a photoelectric conversion portiondisposed between the first electrode film and the second electrode film,wherein the photoelectric conversion portion (C) comprises at least(c-1) a photoelectric conversion layer and (c-2) an organic thin-filmlayer other than the photoelectric conversion layer, and the organicthin-film layer (c-2) other than the photoelectric conversion layercomprises a material for a photoelectric conversion element for use inan imaging element according to any one of [1] to [9];[12] the photoelectric conversion element for use in an imaging elementaccording to [11], wherein the organic thin-film layer (c-2) other thanthe photoelectric conversion layer is an electron blocking layer;[13] the photoelectric conversion element for use in an imaging elementaccording to [11], wherein the organic thin-film layer (c-2) other thanthe photoelectric conversion layer is a hole blocking layer;[14] the photoelectric conversion element for use in an imaging elementaccording to [11], wherein the organic thin-film layer (c-2) other thanthe photoelectric conversion layer is an electron transport layer;[15] the photoelectric conversion element for use in an imaging elementaccording to [11], wherein the organic thin-film layer (c-2) other thanthe photoelectric conversion layer is a hole transport layer;[16] the photoelectric conversion element for use in an imaging elementaccording to any one of [10] to [15], further having (D) a thin-filmtransistor having a hole accumulation portion and (E) a signal readoutportion which reads a signal responding to charge accumulated in thethin-film transistor;[17] the photoelectric conversion element for use in an imaging elementaccording to [16], wherein the thin-film transistor (D) having a holeaccumulation portion further has (d) a connection portion whichelectrically connects the hole accumulation portion to any one of thefirst electrode film and the second electrode film;[18] an imaging element in which a plurality of photoelectric conversionelements for use in an imaging element according to any one of [10] to[17] are arranged in an array pattern; and[19] a photosensor comprising a photoelectric conversion element for usein an imaging element according to any one of [10] to [17] or an imagingelement according to [18].

Advantageous Effects of Invention

The present invention can provide a novel photoelectric conversionelement for use in an imaging element which comprises a compoundrepresented by the formula (1) and is excellent in requiredcharacteristics such as hole- or electron-leakage prevention, hole orelectron transport properties, thermal resistance, and transparency tovisible light.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 shows a cross-sectional view illustrating an embodiment of thephotoelectric conversion element for use in an imaging element of thepresent invention.

FIG. 2 shows a dark current-voltage graph of photoelectric conversionelements for use in an imaging element in Example 1, Example 2, Example3, and Comparative Example 1.

FIG. 3 shows a light current-voltage graph of the photoelectricconversion elements for use in an imaging element in Example 1, Example2, Example 3, and Comparative Example 1.

DESCRIPTION OF EMBODIMENTS

The contents of the present invention will be described in detail. Theexplanation about configuration requirements described below is based ontypical embodiments and specific examples of the present invention.However, the present invention is not intended to be limited by suchembodiments or specific examples.

The material for a photoelectric conversion element for use in animaging element of the present invention comprises a compoundrepresented by the following general formula (1):

In the formula (1), R₁ and R₂ each independently represent a substitutedor unsubstituted aromatic group. In this context, the “substituted orunsubstituted aromatic group” means an aromatic group having at leastone substituent or an aromatic group having no substituent. When thearomatic group has substituent(s), the aromatic group can have at leastone substituent, and the position of substitution and the number ofsubstituents are not particularly limited.

Specific examples of the aromatic group represented by each of R₁ and R₂in the formula (1) include: aromatic hydrocarbon groups such as a phenylgroup, a biphenyl group, a naphthyl group, an anthryl group, aphenanthryl group, a pyrenyl group, and a benzopyrenyl group;heterocyclic groups such as a pyridyl group, a pyrazyl group, apyrimidyl group, a quinolyl group, an isoquinolyl group, a pyrrolylgroup, an indolenyl group, an imidazolyl group, a carbazolyl group, athienyl group, a furyl group, a pyranyl group, and a pyridonyl group;and condensed heterocyclic groups such as a benzoquinolyl group, ananthraquinolyl group, and a benzothienyl group. Among these, an aromatichydrocarbon group or a heterocyclic group is preferred. The aromaticgroup is more preferably a phenyl group, a biphenyl group, a naphthylgroup, a phenanthryl group, or a carbazolyl group, further preferably aphenyl group, a phenanthryl group, or a carbazolyl group, particularlypreferably a phenyl group or a biphenyl group. Also preferably, both ofR₁ and R₂ are the same groups.

Examples of the substituent on the aromatic group represented by each ofR₁ and R₂ in the formula (1) include, but are not limited to, an alkylgroup, an alkoxy group, an aromatic group, a halogen atom, a hydroxylgroup, a mercapto group, a nitro group, an alkyl-substituted aminogroup, an aryl-substituted amino group, an unsubstituted amino group(NH₃ group), an acyl group, an alkoxycarbonyl group, a cyano group, andan isocyano group.

Specific examples of the alkyl group as the substituent on the aromaticgroup represented by each of R₁ and R₂ in the formula (1) include alkylgroups each having 1 to 36 carbon atoms, such as a methyl group, anethyl group, a propyl group, an iso-propyl group, a n-butyl group, aniso-butyl group, a t-butyl group, a n-pentyl group, an iso-pentyl group,a t-pentyl group, a sec-pentyl group, a n-hexyl group, an iso-hexylgroup, a n-heptyl group, a sec-heptyl group, a n-octyl group, a n-nonylgroup, a sec-nonyl group, a n-decyl group, a n-undecyl group, an-dodecyl group, a n-tridecyl group, a n-tetradecyl group, an-pentadecyl group, a n-hexadecyl group, a n-heptadecyl group, an-octadecyl group, a n-nonadecyl group, a n-eicosyl group, a docosylgroup, a n-pentacosyl group, a n-octacosyl group, a n-tricontyl group, a5-(n-pentyl)decyl group, a heneicosyl group, a tricosyl group, atetracosyl group, a hexacosyl group, a heptacosyl group, a nonacosylgroup, a n-triacontyl group, a squaryl group, a dotriacontyl group, andhexatriacontyl group. The alkyl group is preferably an alkyl grouphaving 1 to 24 carbon atoms, more preferably an alkyl group having 1 to20 carbon atoms, further preferably an alkyl group having 1 to 12 carbonatoms, particularly preferably an alkyl group having 1 to 6 carbonatoms, most preferably an alkyl group having 1 to 4 carbon atoms.

Specific examples of the alkoxy group as the substituent on the aromaticgroup represented by each of R₁ and R₂ in the formula (1) include alkoxygroups each having 1 to 36 carbon atoms, such as a methoxy group, anethoxy group, a propoxy group, an iso-propoxy group, a n-butoxy group,an iso-butoxy group, a t-butoxy group, a n-pentyloxy group, aniso-pentyloxy group, a t-pentyloxy group, a sec-pentyloxy group, an-hexyloxy group, an iso-hexyloxy group, a n-heptyloxy group, asec-heptyloxy group, a n-octyloxy group, a n-nonyloxy group, asec-nonyloxy group, a n-decyloxy group, a n-undecyloxy group, an-dodecyloxy group, a n-tridecyloxy group, a n-tetradecyloxy group, an-pentadecyloxy group, a n-hexadecyloxy group, a n-heptadecyloxy group,a n-octadecyloxy group, a n-nonadecyloxy group, a n-eicosyloxy group, adocosyloxy group, a n-pentacosyloxy group, a n-octacosyloxy group, an-tricontyloxy group, a 5-(n-pentyl)decyloxy group, a heneicosyloxygroup, a tricosyloxy group, a tetracosyloxy group, a hexacosyloxy group,a heptacosyloxy group, a nonacosyloxy group, a n-triacontyloxy group, asquaryloxy group, a dotriacontyloxy group, and a hexatriacontyloxygroup. The alkoxy group is preferably an alkoxy group having 1 to 24carbon atoms, more preferably an alkoxy group having 1 to 20 carbonatoms, further preferably an alkoxy group having 1 to 12 carbon atoms,particularly preferably an alkoxy group having 1 to 6 carbon atoms, mostpreferably an alkoxy group having 1 to 4 carbon atoms.

Specific examples of the aromatic group as the substituent on thearomatic group represented by each of R₁ and R₂ in the formula (1)include the same as those mentioned about the aromatic group representedby each of R₁ and R₂ in the formula (1). The preferred aromatic group isalso the same as those mentioned about the aromatic group represented byeach of R₁ and R₂ in the formula (1).

Specific examples of the halogen atom as the substituent on the aromaticgroup represented by each of R₁ and R₂ in the formula (1) include afluorine atom, a chlorine atom, a bromine atom, and an iodine atom.

The alkyl-substituted amino group as the substituent on the aromaticgroup represented by each of R₁ and R₂ in the formula (1) is not limitedto any of monoalkyl-substituted amino groups and dialkyl-substitutedamino groups. Examples of the alkyl group for these alkyl-substitutedamino groups include the same as those listed as the alkyl group as thesubstituent on the aromatic group represented by each of R₁ and R₂ inthe formula (1).

The aryl-substituted amino group as the substituent on the aromaticgroup represented by each of R₁ and R₂ in the formula (1) is not limitedto any of monoaryl-substituted amino groups and diaryl-substituted aminogroups. Examples of the aryl group for these aryl-substituted aminogroups include the same as the aromatic hydrocarbon groups described asthe aromatic group represented by each of R₁ and R₂ in the formula (1).

Examples of the acyl group as the substituent on the aromatic grouprepresented by each of R₁ and R₂ in the formula (1) include substituentscomposed of a carbonyl group (═CO group) bonded to the aromatichydrocarbon group described as the aromatic group represented by each ofR₁ and R₂ in the formula (1) or the alkyl group as the substituent onthe aromatic group represented by each of R₁ and R₂ in the formula (1).

Examples of the alkoxycarbonyl group as the substituent on the aromaticgroup represented by each of R₁ and R₂ in the formula (1) includesubstituents composed of a carbonyl group bonded to the alkoxy group asthe substituent on the aromatic group represented by each of R₁ and R₂in the formula (1).

The substituent on the aromatic group represented by each of R₁ and R₂in the formula (1) is preferably an alkyl group, an aromatic group, ahalogen atom, or an alkoxyl group, more preferably an alkyl group or anaromatic hydrocarbon group, further preferably a methyl group, an ethylgroup, or a phenyl group, particularly preferably a methyl group or anethyl group.

Specifically, R₁ and R₂ in the formula (1) are each independentlypreferably an aromatic hydrocarbon group or a heterocyclic groupoptionally having substituent(s) selected from the group consisting ofan alkyl group, an aromatic hydrocarbon group, a halogen atom, and analkoxyl group, each independently more preferably a phenyl group, anaphthyl group, a phenanthryl group, or a carbazolyl group optionallyhaving substituent(s) selected from the group consisting of an alkylgroup and an aromatic hydrocarbon group, each independently particularlypreferably a phenyl group, a phenanthryl group, or a carbazolyl groupoptionally having substituent(s) selected from the group consisting of amethyl group, an ethyl group, a phenyl group, and a biphenyl group, eachindependently most preferably a phenyl group optionally havingsubstituent(s) selected from the group consisting of a methyl group, aphenyl group, and a biphenyl group. In these preferred forms, furtherpreferably, R₁ and R₂ are the same groups.

More specifically, both of R₁ and R₂ in the formula (1) are preferablythe same unsubstituted phenyl groups, the same phenyl groups having analkyl group having 1 to 4 carbon atoms at the 4-position, the samephenyl groups having a phenyl group or a biphenyl group (the position ofsubstitution by the phenyl group or the biphenyl group can be any of the2-position, the 3-position, and the 4-position), the same phenyl groupshaving phenyl groups at the 3-position and the 5-position, the sameunsubstituted phenanthryl groups, or the same unsubstituted carbazolylgroup.

More specifically, both of R₁ and R₂ in the formula (1) are morepreferably the same unsubstituted phenyl groups, the same phenyl groupshaving an alkyl group having 1 to 4 carbon atoms at the 4-position, thesame phenyl groups having a phenyl group or a biphenyl group (theposition of substitution by the phenyl group or the biphenyl group canbe any of the 2-position, the 3-position, and the 4-position), or thesame phenyl groups having phenyl groups at the 3-position and the5-position.

More specifically, both of R₁ and R₂ in the formula (1) are furtherpreferably the same phenyl groups having a phenyl group or a biphenylgroup (the position of substitution by the phenyl group or the biphenylgroup can be any of the 2-position, the 3-position, and the 4-position),or the same phenyl groups having phenyl groups at the 3-position and the5-position.

More specifically, both of R₁ and R₂ in the formula (1) are particularlypreferably the same phenyl groups having a phenyl group or a biphenylgroup (the position of substitution by the phenyl group or the biphenylgroup can be any of the 2-position, the 3-position, and the 4-position).

More specifically, both of R₁ and R₂ in the formula (1) are mostpreferably the same phenyl groups having a biphenyl group (the positionof substitution by the biphenyl group can be any of the 2-position, the3-position, and the 4-position).

The position of substitution on each of R₁ and R₂ in the formula (1) isnot particularly limited and is preferably the 2,7-position in[1]benzothieno[3,2-b][1]benzothiophene in the formula (1). Specifically,the compound represented by the formula (1) is preferably a compoundrepresented by the following general formula (2):

In the formula (2), R₁ and R₂ are as defined in the formula (1).Preferred R₁ and R₂ are also the same as in the formula (1).

Specifically, the compound represented by the formula (2) is preferablya compound of the formula (2) wherein both of R₁ and R₂ take thepreferred to most preferred forms in the formula (1) described above,more preferably a compound represented by the formula (20), (21), (25),or (26) in specific examples mentioned later, even more preferably acompound represented by the formula (20) or (25) in the specificexamples, further preferably a compound represented by the formula (25)in the specific examples.

The compound represented by the formula (1) can be synthesized by, forexample, any of methods known in the art which are disclosed in PatentLiterature 1, Patent Literature 6, and Non Patent Literature 1. Examplesof such methods include a method described in Scheme 1 below. Anitrostilbene derivative (A) is used as a starting material, and thedesired compound can be obtained by forming a benzothienobenzothiopheneskeleton (D) and subsequently converting the resulting compound to anaminated form (E) and then to a halogenated form (F), followed bycoupling with a boric acid derivative. The method of Patent Literature 5is more effective because the desired compound can be manufactured inone step from the corresponding benzaldehyde derivative.

A method for purifying the compound represented by the formula (1) isnot particularly limited, and a method known in the art such asrecrystallization, column chromatography, and vacuum sublimationpurification can be adopted. If necessary, these methods can becombined.

Hereinafter, specific examples of the compound represented by theformula (1) will be illustrated. However, the compound that can be usedin the present invention is not limited to these specific examples.

The photoelectric conversion element for use in an imaging element(hereinafter, also simply referred to as the “photoelectric conversionelement”) of the present invention is an element in which aphotoelectric conversion portion (C) is disposed between two electrodefilms facing each other, i.e., a first electrode film (A) and a secondelectrode film (B). Light enters the photoelectric conversion portionfrom above the first electrode film (A) or the second electrode film(B). The photoelectric conversion portion (C) generates electrons andholes according to the intensity of the incident light. A semiconductorreads a signal responding to the charge, and the element exhibits theincident light intensity responding to the absorption wavelength of thephotoelectric conversion portion. A transistor for readout may beconnected to the electrode film on the side where light does not enter.When a large number of photoelectric conversion elements are arranged inan array pattern, these elements serve as an imaging element becauseexhibiting the incident light intensity as well as information on theposition of incidence. A plurality of photoelectric conversion elementsmay be laminated for use as long as a photoelectric conversion elementpositioned closer to a light source does not block (or transmits) theabsorption wavelength of a photoelectric conversion element disposedtherebehind when viewed from the light source side. A multicolor imagingelement (full-color photodiode array) can be formed by laminating andusing a plurality of photoelectric conversion elements having theirdistinctive absorption wavelengths in the visible light region.

The material for a photoelectric conversion element for use in animaging element of the present invention is used as a materialconstituting the photoelectric conversion portion (C).

The photoelectric conversion portion (C) is often composed of (c-1) aphotoelectric conversion layer and (c-2) one or more organic thin-filmlayer(s) other than the photoelectric conversion layer, selected fromthe group consisting of an electron transport layer, a hole transportlayer, an electron blocking layer, a hole blocking layer, acrystallization prevention layer, and an interlayer contact improvementlayer, etc. The material for a photoelectric conversion element for usein an imaging element of the present invention can be used in any of thephotoelectric conversion layer (c-1) and the organic thin-film layer(c-2) other than the photoelectric conversion layer and is preferablyused in the organic thin-film layer (c-2) other than the photoelectricconversion layer.

When the photoelectric conversion layer (c-1) comprised in thephotoelectric conversion portion (C) mentioned later has hole transportproperties or when the organic thin-film layer (c-2) other than thephotoelectric conversion layer (hereinafter, the organic thin-film layerother than the photoelectric conversion layer is also simply referred toas the “organic thin-film layer (c-2)”) is a hole transport layer havinghole transport properties, the first electrode film (A) and the secondelectrode film (B) carried by the photoelectric conversion element foruse in an imaging element of the present invention plays roles inextracting holes from the photoelectric conversion layer (c-1) or theorganic thin-film layer (c-2) and collecting the holes. When thephotoelectric conversion layer (c-1) comprised in the photoelectricconversion portion (C) has electron transport properties or when theorganic thin-film layer (c-2) is an electron transport layer havingelectron transport properties, the first electrode film (A) and thesecond electrode film (B) plays roles in extracting electrons from thephotoelectric conversion layer (c-1) or the organic thin-film layer(c-2) and discharging the electrons. Accordingly, the material that maybe used for each of the first electrode film (A) and the secondelectrode film (B) is not particularly limited as long as the materialhas conductivity to some extent. The material is preferably selected inconsideration of adhesion to the adjacent photoelectric conversion layer(c-1) or organic thin-film layer (c-2), electron affinity, ionizationpotential, stability, etc. Examples of the material that may be used foreach of the first electrode film (A) and the second electrode film (B)include: conductive metal oxides such as tin oxide (NESA), indium oxide,tin-doped indium oxide (ITO), and zinc-doped indium oxide (IZO); metalssuch as gold, silver, platinum, chromium, aluminum, iron, cobalt,nickel, and tungsten; inorganic conductive substances such as copperiodide and copper sulfide; conductive polymers such as polythiophene,polypyrrole, and polyaniline; and carbon. These materials may be used,if necessary, as a mixture of two or more thereof or as a laminate oftwo or more layers thereof. The conductivity of the material for use ineach of the first electrode film (A) and the second electrode film (B)is not particularly limited unless the conductivity interferes more thannecessary with the light reception of the photoelectric conversionelement. The conductivity is preferably as high as possible from theviewpoint of the signal intensity and power consumption of thephotoelectric conversion element. For example, an ITO film havingconductivity with a sheet resistance of 300Ω/□ or smaller functionsadequately as each of the first electrode film (A) and the secondelectrode film (B). A commercially available substrate equipped with anITO film having conductivity with a sheet resistance on the order ofseveral Ω/□ can also be obtained. Therefore, it is desirable to use sucha substrate having high conductivity. The thickness of the ITO film(electrode film) can be arbitrarily selected in consideration ofconductivity and is on the order of usually 5 to 500 nm, preferably 10to 300 nm. Examples of methods for forming the film such as ITO includevapor deposition methods, electron beam methods, sputtering methods,chemical reaction methods, and coating methods conventionally known inthe art. The ITO film disposed on the substrate may be provided, ifnecessary, with UV-ozone treatment, plasma treatment, or the like.

Examples of the material for the transparent electrode film that is usedas at least any one (electrode film on the side where light enters) ofthe first electrode film (A) and the second electrode film (B) includeITO, IZO, SnO₂, ATO (antimony-doped tin oxide), ZnO, AZO (Al-doped zincoxide), GZO (gallium-doped zinc oxide), TiO₂, and FTO (fluorine-dopedtin oxide). The transmittance of the incident light via the transparentelectrode film is preferably 60% or higher, more preferably 80% orhigher, particularly preferably 95% or higher, at the absorption peakwavelength of the photoelectric conversion layer (c-1).

In the case of laminating a plurality of photoelectric conversion layersdiffering in wavelength to be detected, an electrode film (which is anelectrode film other than the first electrode film (A) and the secondelectrode film (B)) for use between the photoelectric conversion layersneeds to transmit light having a wavelength other than the light to bedetected by each photoelectric conversion layer. For this electrodefilm, it is preferred to use a material that transmits 90% or more ofthe incident light, and it is more preferred to use a material thattransmits 95% or more of the light.

The electrode films are preferably prepared in a plasma-free form. Theseelectrode films prepared in a plasma-free form can reduce the influenceof plasma on the substrate provided with the electrode films and improvethe photoelectric conversion characteristics of the photoelectricconversion element. In this context, the term “plasma-free” means thatduring the film formation of the electrode films, no plasma is generatedor the distance from a plasma source to the substrate is 2 cm or more,preferably 10 cm or more, more preferably 20 cm or more, such that theplasma arriving at the substrate is decreased.

Examples of apparatuses that generate no plasma during the filmformation of the electrode films include electron beam vapor depositionapparatuses (EB vapor deposition apparatuses) and pulse laser vapordeposition apparatuses. Hereinafter, a film formation method for atransparent electrode film using an EB vapor deposition apparatus isreferred to as an EB vapor deposition method, and a film formationmethod for a transparent electrode film using a pulse laser vapordeposition apparatus is referred to as a pulse laser vapor depositionmethod.

For example, a facing target sputtering apparatus or an arc plasma vapordeposition apparatus is possible as an apparatus that can achieve astate where plasma can be decreased during the film formation(hereinafter, referred to as a plasma-free film formation apparatus).

In the case of using a transparent conductive film as an electrode film(e.g., a first conductive film), DC short or increase in leakage currentmay occur. A possible cause thereof is that fine cracks generated in thephotoelectric conversion layer are covered with a compact film such asTCO (transparent conductive oxide) to increase continuity with anelectrode film (second conductive film) on a side opposite to thetransparent conductive film. Therefore, in the case of using a material,such as Al, which has relatively poor film quality in an electrode,increase in leakage current is less likely to occur. The increase inleakage current can be suppressed by controlling the film thickness ofeach electrode film according to the film thickness (depth of cracks) ofthe photoelectric conversion layer.

In general, as the conductive film is thinner than the predeterminedvalue, rapid increase in resistance occurs. The sheet resistance of theconductive film in the photoelectric conversion element for use in animaging element according to the present embodiment is usually 100 to10000Ω/□ at which the degree of freedom of the film thickness is large.A thinner transparent conductive film absorbs a smaller amount of lightand generally has a higher light transmittance. Such a higher lighttransmittance is very preferred because the light absorbed by thephotoelectric conversion layer is increased to improve the photoelectricconversion ability.

The photoelectric conversion portion (C) carried by the photoelectricconversion element for use in an imaging element of the presentinvention comprises at least (c-1) a photoelectric conversion layer and(c-2) an organic thin-film layer other than the photoelectric conversionlayer.

In general, an organic semiconductor film is used as the photoelectricconversion layer (c-1) constituting the photoelectric conversion portion(C). The organic semiconductor film may be one layer or a plurality oflayers. For one layer, a P-type organic semiconductor film, an N-typeorganic semiconductor film, or a mixed film thereof (bulkheterostructure) is used. On the other hand, the plurality of layers areon the order of 2 to 10 layers and have a structure having a laminate ofP-type organic semiconductor films, N-type organic semiconductor films,or mixed films thereof (bulk heterostructure). A buffer layer may beinserted between the layers.

A triarylamine compound, a benzidine compound, a pyrazoline compound, astyrylamine compound, a hydrazone compound, a triphenylmethane compound,a carbazole compound, a polysilane compound, a thiophene compound, aphthalocyanine compound, a cyanine compound, a merocyanine compound, anoxonol compound, a polyamine compound, an indole compound, a pyrrolecompound, a pyrazole compound, a polyarylene compound, a carbazolederivative, a naphthalene derivative, an anthracene derivative, achrysene derivative, a phenanthrene derivative, a pentacene derivative,a phenylbutadiene derivative, a styryl derivative, a quinolinederivative, a tetracene derivative, a pyrene derivative, a perylenederivative, a fluoranthene derivative, a quinacridone derivative, acoumarin derivative, a porphyrin derivative, a fullerene derivative, ametal complex (Ir complex, Pt complex, Eu complex, etc.), or the likecan be used in the organic semiconductor film of the photoelectricconversion layer (c-1) according to the wavelength band to be absorbed.

In the photoelectric conversion element for use in an imaging element ofthe present invention, the organic thin-film layer (c-2) other than thephotoelectric conversion layer constituting the photoelectric conversionportion (C) is also used as a layer other than the photoelectricconversion layer (c-1), for example, an electron transport layer, a holetransport layer, an electron blocking layer, a hole blocking layer, acrystallization prevention layer, or an interlayer contact improvementlayer. Particularly, it is preferred to use the organic thin-film layer(c-2) as one or more thin-film layer(s) selected from the groupconsisting of an electron transport layer, a hole transport layer, anelectron blocking layer, and a hole blocking layer, because theresulting element efficiently converts even weak light energy to anelectric signal.

The electron transport layer plays roles in transporting electronsgenerated in the photoelectric conversion layer (c-1) to the firstelectrode film (A) or the second electrode film (B) and blocking thetransfer of holes from the electrode film as an electron acceptor to thephotoelectric conversion layer (c-1).

The hole transport layer plays roles in transporting generated holesfrom the photoelectric conversion layer (c-1) to the first electrodefilm (A) or the second electrode film (B) and blocking the transfer ofelectrons from the electrode film as a hole acceptor to thephotoelectric conversion layer (c-1).

The electron blocking layer plays roles in blocking the transfer ofelectrons from the first electrode film (A) or the second electrode film(B) to the photoelectric conversion layer (c-1), preventingrecombination in the photoelectric conversion layer (c-1), and reducingdark current.

The hole blocking layer has the functions of blocking the transfer ofholes from the first electrode film (A) or the second electrode film (B)to the photoelectric conversion layer (c-1), preventing recombination inthe photoelectric conversion layer (c-1), and reducing dark current.

The hole blocking layer is formed by using alone a substance capable ofblocking holes or by mixing and laminating two or more of substancescapable of blocking holes. The substance capable of blocking holes isnot limited as long as the substance is a compound that can prevent theefflux of the holes from the electrode to the outside of the element.Examples of the compound that can be used in the hole blocking layerinclude the compound represented by the general formula (1) as well asphenanthroline derivatives such as bathophenanthroline andbathocuproine, silole derivatives, quinolinol derivative-metalcomplexes, oxadiazole derivatives, oxazole derivatives, and quinolinederivatives. One or two or more of these compounds can be used.

The organic thin-film layer (c-2) other than the photoelectricconversion layer, comprising the compound represented by the generalformula (1) can be suitably used, particularly, as a hole blockinglayer. A larger film thickness of the hole blocking layer is morepreferred from the viewpoint of preventing leakage current. A filmthickness as small as possible is more preferred from the viewpoint ofobtaining a sufficient amount of current for signal readout at the timeof light incidence. For achieving these conflicting characteristics, itis generally preferred that the photoelectric conversion portion (C)comprising the layers (c-1) and (c-2) should have a film thickness onthe order of 5 to 500 nm. How the layer comprising the compoundrepresented by the general formula (1) works varies depending on theother compounds used in the photoelectric conversion element.

For avoiding interference with the light absorption of the photoelectricconversion layer (c-1), it is preferred that the hole blocking layer andthe electron blocking layer should have a high transmittance at theabsorption wavelength of the photoelectric conversion layer and shouldbe used as thin films.

FIG. 1 illustrates the details of a typical element structure of thephotoelectric conversion element for use in an imaging element of thepresent invention. However, the present invention is not intended to belimited by this structure. In the exemplary embodiment of FIG. 1, 1denotes an insulation portion, 2 denotes one of the electrode films(first electrode film or second electrode film), 3 denotes an electronblocking layer, 4 denotes a photoelectric conversion layer, 5 denotes ahole blocking layer, 6 denotes the other electrode film (secondelectrode film or first electrode film), and 7 denotes an insulatingbase material or a laminated photoelectric conversion element. A readouttransistor (not shown in the drawing) can be connected to either of theelectrode film 2 or 6. For example, provided that the photoelectricconversion layer 4 is transparent, this film may be formed on theoutside of the electrode film on a side opposite to the side where lightenters (i.e., the upside of the electrode film 2 or the downside of theelectrode film 6). Provided that a thin-film layer (electron blockinglayer, hole blocking layer, etc.) other than the photoelectricconversion layer constituting the photoelectric conversion element dosenot extremely mask the absorption wavelength of the photoelectricconversion layer, the incident direction of light can be any of thedownward direction (incidence from the insulation portion 1 side inFIG. 1) or the upward direction (incidence from the insulating basematerial 7 side in FIG. 1).

In general, for example, a vacuum process (resistance heating vacuumvapor deposition, electron beam vapor deposition, sputtering, andmolecular lamination), a solution process (coating methods such ascasting, spin coating, dip coating, blade coating, wire bar coating, andspray coating; printing methods such as inkjet printing, screenprinting, offset printing, and relief printing; and soft lithographyapproaches such as microcontact printing), or a method using acombination of two or more of these approaches can be adopted as amethod for forming the photoelectric conversion layer (c-1) and theorganic thin-film layer (c-2) other than the photoelectric conversionlayer in the photoelectric conversion element for use in an imagingelement of the present invention. The thickness of each layer alsodepends on the resistance and charge mobility of each substance andthus, cannot be limited. The thickness of each layer is usually in therange of 0.5 to 5000 nm, preferably in the range of 1 to 1000 nm, morepreferably in the range of 5 to 500 nm.

EXAMPLES

Hereinafter, the present invention will be described in more detail withreference to Examples. However, the present invention is not intended tobe limited by these examples.

The blocking layer described in Examples can be any of the hole blockinglayer and the electron blocking layer. In Examples 1 to 3 andComparative Example 1, the photoelectric conversion element was preparedin a vapor deposition machine, and the application and measurement ofcurrent and voltage were conducted in the atmosphere. In Examples 4 to8, the photoelectric conversion element was prepared in a vapordeposition machine integrated with a glove box, and the preparedphotoelectric conversion element was placed in a hermetically sealablebottle-shaped measurement chamber (manufactured by ALS Technology Co.,Ltd.) in the glove box having a nitrogen atmosphere, and subjected tothe application and measurement of current and voltage. The applicationand measurement of current and voltage were conducted using asemiconductor parameter analyzer 4200-SCS (Keithley Instruments, Inc.),unless otherwise specified. Irradiation with incident light was carriedout at a light wavelength of 550 nm and a light half-value width of 20nm using PVL-3300 (manufactured by Asahi Spectra Co., Ltd.), unlessotherwise specified. In Examples, a light-dark ratio represents a valuedetermined by dividing a current value in the case of light irradiationby a current value in the dark.

Example 1 Preparation of Photoelectric Conversion Element and EvaluationThereof

On ITO transparent conductive glass (manufactured by GEOMATEC Co., Ltd.,ITO film thickness: 150 nm), a film of2,7-diphenyl[1]benzothieno[3,2-b][1]benzothiophene (compound representedby the formula (11) in the specific examples described above) was formedas a blocking layer having a thickness of 50 nm by resistance heatingvacuum vapor deposition. Next, on the blocking layer, a film ofquinacridone was formed in vacuum as a photoelectric conversion layerhaving a thickness of 100 nm. Finally, on the photoelectric conversionlayer, a film of aluminum was formed in vacuum as an electrode having athickness of 100 nm to prepare the photoelectric conversion element foruse in an imaging element of the present invention. When a voltage of 5V was applied using the ITO and aluminum electrodes, the current in thedark was −1.68×10⁻¹⁰ A/cm². When a voltage of 5 V was applied to thetransparent conductive glass side, the current in the case of lightirradiation was −1.01×10⁻⁷ A/cm². When a voltage of 5 V was applied tothe transparent conductive glass side, the light-dark ratio was 600.

Example 2 Preparation of Photoelectric Conversion Element and EvaluationThereof

On ITO transparent conductive glass (manufactured by GEOMATEC Co., Ltd.,ITO film thickness: 150 nm), a film of2,7-bis(4-methylphenyl)[1]benzothieno[3,2-b][1]benzothiophene (compoundrepresented by the formula (14) in the specific examples describedabove) was formed as a blocking layer having a thickness of 50 nm byresistance heating vacuum vapor deposition. Next, on the blocking layer,a film of quinacridone was formed in vacuum as a photoelectricconversion layer having a thickness of 100 nm. Finally, on thephotoelectric conversion layer, a film of aluminum was formed in vacuumas an electrode having a thickness of 100 nm to prepare thephotoelectric conversion element for use in an imaging element of thepresent invention. When a voltage of 5 V was applied using the ITO andaluminum electrodes, the current in the dark was −8.85×10⁻¹¹ A/cm². Whena voltage of 5 V was applied to the transparent conductive glass side,the current in the case of light irradiation was −3.05×10⁻⁷ A/cm². Whena voltage of 5 V was applied to the transparent conductive glass side,the light-dark ratio was 3500.

Example 3 Preparation of Photoelectric Conversion Element and EvaluationThereof

On ITO transparent conductive glass (manufactured by GEOMATEC Co., Ltd.,ITO film thickness: 150 nm), a film of2,7-bis(4-ethylphenyl)[1]benzothieno[3,2-b][1]benzothiophene (compoundrepresented by the formula (15) in the specific examples describedabove) was formed as a blocking layer having a thickness of 50 nm byresistance heating vacuum vapor deposition. Next, on the blocking layer,a film of quinacridone was formed in vacuum as a photoelectricconversion layer having a thickness of 100 nm. Finally, on thephotoelectric conversion layer, a film of aluminum was formed in vacuumas an electrode having a thickness of 100 nm to prepare thephotoelectric conversion element for use in an imaging element of thepresent invention. When a voltage of 5 V was applied using the ITO andaluminum electrodes, the current in the dark was 1.41×10⁻¹⁰ A/cm². Whena voltage of 5 V was applied to the transparent conductive glass side,the current in the case of light irradiation was 5.47×10⁻⁷ A/cm². When avoltage of 5 V was applied to the transparent conductive glass side, thelight-dark ratio was 3900.

Comparative Example 1 Preparation of Photoelectric Conversion Elementand Evaluation Thereof

On ITO transparent conductive glass (manufactured by GEOMATEC Co., Ltd.,ITO film thickness: 150 nm), a film of tris(8-quinolinato)aluminum wasformed as a blocking layer having a thickness of 50 nm by resistanceheating vacuum vapor deposition. Next, on the blocking layer, a film ofquinacridone was formed in vacuum as a photoelectric conversion layerhaving a thickness of 100 nm. Finally, on the photoelectric conversionlayer, a film of aluminum was formed in vacuum as an electrode having athickness of 100 nm to prepare a photoelectric conversion element foruse in an imaging element for comparison. When a voltage of 5 V wasapplied using the ITO and aluminum electrodes, the current in the darkwas −1.06×10⁻¹⁰ A/cm². When a voltage of 5 V was applied to thetransparent conductive glass side, the current in the case of lightirradiation was −3.33×10⁻⁹ A/cm². When a voltage of 5 V was applied tothe transparent conductive glass side, the light-dark ratio was 31.

The dark current-voltage graph obtained in the evaluation of Examples 1to 3 and Comparative Example 1 described above is shown in FIG. 2, andthe light current-voltage graph obtained therein is shown in FIG. 3. Asis evident from FIGS. 2 and 3 and the Examples described above, thephotoelectric conversion element for use in an imaging element of thepresent invention exhibits dark current prevention properties equivalentto the photoelectric conversion element for use in an imaging elementfor comparison, and is superior in light current characteristics to thephotoelectric conversion element for use in an imaging element forcomparison.

Example 4 Preparation of Photoelectric Conversion Element and EvaluationThereof

On ITO transparent conductive glass (manufactured by GEOMATEC Co., Ltd.,ITO film thickness: 150 nm), a film of2,7-bis(p-biphenyl)-[1]benzothieno[3,2-b][1]benzothiophene (compoundrepresented by the formula (20) in the specific examples describedabove) was formed as a blocking layer having a thickness of 50 nm byresistance heating vacuum vapor deposition. Next, on the blocking layer,a film of quinacridone was formed in vacuum as a photoelectricconversion layer having a thickness of 100 nm. Finally, on thephotoelectric conversion layer, a film of aluminum was formed in vacuumas an electrode having a thickness of 100 nm to prepare thephotoelectric conversion element for use in an imaging element of thepresent invention. When a voltage of 5 V was applied to the transparentconductive glass side using the ITO and aluminum electrodes, thelight-dark ratio was 15000.

Example 5 Preparation of Photoelectric Conversion Element and EvaluationThereof

On ITO transparent conductive glass (manufactured by GEOMATEC Co., Ltd.,ITO film thickness: 150 nm), a film of2,7-bis(m-biphenyl)-[1]benzothieno[3,2-b][1]benzothiophene (compoundrepresented by the formula (21) in the specific examples describedabove) was formed as a blocking layer having a thickness of 50 nm byresistance heating vacuum vapor deposition. Next, on the blocking layer,a film of quinacridone was formed in vacuum as a photoelectricconversion layer having a thickness of 100 nm. Finally, on thephotoelectric conversion layer, a film of aluminum was formed in vacuumas an electrode having a thickness of 100 nm to prepare thephotoelectric conversion element for use in an imaging element of thepresent invention. When a voltage of 5 V was applied to the transparentconductive glass side using the ITO and aluminum electrodes, thelight-dark ratio was 1800.

Example 6 Preparation of Photoelectric Conversion Element and EvaluationThereof

On ITO transparent conductive glass (manufactured by GEOMATEC Co., Ltd.,ITO film thickness: 150 nm), a film of2,7-bis(9-phenanthrenyl)-[1]benzothieno[3,2-b][1]benzothiophene(compound represented by the formula (72) in the specific examplesdescribed above) was formed as a blocking layer having a thickness of 50nm by resistance heating vacuum vapor deposition. Next, on the blockinglayer, a film of quinacridone was formed in vacuum as a photoelectricconversion layer having a thickness of 100 nm. Finally, on thephotoelectric conversion layer, a film of aluminum was formed in vacuumas an electrode having a thickness of 100 nm to prepare thephotoelectric conversion element for use in an imaging element of thepresent invention. When a voltage of 5 V was applied to the transparentconductive glass side using the ITO and aluminum electrodes, thelight-dark ratio was 690.

Example 7 Preparation of Photoelectric Conversion Element and EvaluationThereof

On ITO transparent conductive glass (manufactured by GEOMATEC Co., Ltd.,ITO film thickness: 150 nm), a film of2,7-bis(1-naphthyl)-[1]benzothieno[3,2-b][1]benzothiophene (compoundrepresented by the formula (76) in the specific examples describedabove) was formed as a blocking layer having a thickness of 50 nm byresistance heating vacuum vapor deposition. Next, on the blocking layer,a film of quinacridone was formed in vacuum as a photoelectricconversion layer having a thickness of 100 nm. Finally, on thephotoelectric conversion layer, a film of aluminum was formed in vacuumas an electrode having a thickness of 100 nm to prepare thephotoelectric conversion element for use in an imaging element of thepresent invention. When a voltage of 5 V was applied to the transparentconductive glass side using the ITO and aluminum electrodes, thelight-dark ratio was 240.

Example 8 Preparation of Photoelectric Conversion Element and EvaluationThereof

On ITO transparent conductive glass (manufactured by GEOMATEC Co., Ltd.,ITO film thickness: 150 nm), a film of2,7-bis(9H-carbazol-9-yl)-[1]benzothieno[3,2-b][1]benzothiophene(compound represented by the formula (73) in the specific examplesdescribed above) was formed as a blocking layer having a thickness of 50nm by resistance heating vacuum vapor deposition. Next, on the blockinglayer, a film of quinacridone was formed in vacuum as a photoelectricconversion layer having a thickness of 100 nm. Finally, on thephotoelectric conversion layer, a film of aluminum was formed in vacuumas an electrode having a thickness of 100 nm to prepare thephotoelectric conversion element for use in an imaging element of thepresent invention. When a voltage of 5 V was applied to the transparentconductive glass side using the ITO and aluminum electrodes, thelight-dark ratio was 47.

The light-dark ratios obtained in the evaluation of Examples 4 to 8described above evidently show excellent characteristics as aphotoelectric conversion element for use in an imaging element.

Synthesis Example 1 Synthesis of2-([1,1′:4′,1″-terphenyl]-4-yl)-4,4,5,5-tetramethyl-1,3,2-dioxabolorane

200 parts of toluene, 5 parts of 4-bromo-1,1′:4′,1″-terphenyl, 5 partsof bis(pinacolato)diboron, 3 parts of potassium acetate, and 0.5 partsof [1,1′-bis(diphenylphosphino)ferrocene]palladium(II) dichloridedichloromethane adduct were mixed and stirred for 4 hours in a nitrogenatmosphere at a reflux temperature. The obtained solution was cooled toroom temperature. Then, 20 parts of silica gel were added thereto, andthe mixture was stirred for 5 minutes. Then, solid matter was collectedby filtration, and the solvent was distilled off under reduced pressureto obtain 5.5 parts of 2-([1,1′:4′,1″-terphenyl]-4-yl)-4,4,5,5-tetramethyl-1,2,3-dioxaboloranerepresented by the following formula (100) as a white solid:

Synthesis Example 2 Synthesis of2,7-bis(1,1′:4′,1″-terphenyl-4-yl)-[1]benzothieno[3,2-b][1]benzothiophene

120 parts of DMF, 3.5 parts of2-([1,1′:4′,1″-terphenyl]-4-yl)-4,4,5,5-tetramethyl-1,3,2-dioxaboloraneobtained in Synthesis Example 1, 2.1 parts of2,7-diiodo[1]benzothieno[3,2-b][1]benzothiophene, 14 parts oftripotassium phosphate, 4.0 parts of water, and 0.3 parts oftetrakis(triphenylphosphine)palladium(0) were mixed and stirred for 6hours in a nitrogen atmosphere at 90° C. The obtained solution wascooled to room temperature. Then, 120 parts of water were added thereto,and solid matter was collected by filtration. The obtained solid waswashed with acetone, dried, and then purified by ‘ sublimation to obtain3.0 parts of2,7-bis(1,1’:4′,1″-terphenyl-4-yl)-[1]benzothieno[3,2-b][1]benzothiophene(compound represented by the formula (25) in the specific examplesdescribed above).

Example 9 Preparation of Photoelectric Conversion Element and EvaluationThereof

On ITO transparent conductive glass (manufactured by GEOMATEC Co., Ltd.,ITO film thickness: 150 nm), a film of2,7-bis(1,1′:4′,1″-terphenyl-4-yl)-[1]benzothieno[3,2-b][1]benzothiophene(compound represented by the formula (25) in the specific examplesdescribed above) was formed as a blocking layer having a thickness of 50nm by resistance heating vacuum vapor deposition. Next, on the blockinglayer, a film of quinacridone was formed in vacuum as a photoelectricconversion layer having a thickness of 100 nm. Finally, on thephotoelectric conversion layer, a film of aluminum was formed in vacuumas an electrode having a thickness of 100 nm to prepare thephotoelectric conversion element for use in an imaging element of thepresent invention. When a voltage of 5 V was applied to the transparentconductive glass side using the ITO and aluminum electrodes, thelight-dark ratio was 140000.

The light-dark ratio obtained in the evaluation of Example 9 describedabove evidently shows excellent characteristics as a photoelectricconversion element for use in an imaging element.

INDUSTRIAL APPLICABILITY

As described above, the compound represented by the formula (1) or theformula (2) has performance excellent in organic photoelectricconversion characteristics and is expected to be applied to fieldsincluding organic imaging elements having high resolution and highresponsiveness as well as devices such as organic solar cells,photosensors, infrared sensors, ultraviolet sensors, X-ray sensors, andphoton counters, cameras, video cameras, infrared cameras, etc., usingthese devices.

REFERENCE SIGNS LIST

-   1: Insulation portion-   2: Upper electrode-   3: Electron blocking layer or hole transport layer-   4: Photoelectric conversion layer-   5: Hole blocking layer or electron transport layer-   6: Lower electrode-   7: Insulating base material or another photoelectric conversion    element

1. A material for a photoelectric conversion element for use in animaging element, comprising a compound represented by the followingformula (1):

wherein R₁ and R₂ each independently represent a substituted orunsubstituted aromatic group.
 2. The material for a photoelectricconversion element for use in an imaging element according to claim 1,wherein the compound of the formula (1) is a compound represented by thefollowing formula (2):

wherein R₁ and R₂ are as defined in the formula (1) according toclaim
 1. 3. The material for a photoelectric conversion element for usein an imaging element according to claim 1, wherein R₁ and R₂ in theformula (1) or the formula (2) are each independently a substituted orunsubstituted aromatic hydrocarbon group.
 4. The material for aphotoelectric conversion element for use in an imaging element accordingto claim 3, wherein each of R₁ and R₂ in the formula (1) or the formula(2) is a substituted or unsubstituted phenyl group.
 5. The material fora photoelectric conversion element for use in an imaging elementaccording to claim 4, wherein each of R₁ and R₂ in the formula (1) orthe formula (2) is a phenyl group having a substituted or unsubstitutedaromatic hydrocarbon group.
 6. The material for a photoelectricconversion element for use in an imaging element according to claim 5,wherein each of R₁ and R₂ in the formula (1) or the formula (2) is aphenyl group having a substituted or unsubstituted phenyl group.
 7. Thematerial for a photoelectric conversion element for use in an imagingelement according to claim 6, wherein each of R₁ and R₂ in the formula(1) or the formula (2) is a phenyl group having a biphenyl group.
 8. Thematerial for a photoelectric conversion element for use in an imagingelement according to claim 4, wherein each of R₁ and R₂ in the formula(1) or the formula (2) is a phenyl group having an alkyl group having 1to 12 carbon atoms.
 9. The material for a photoelectric conversionelement for use in an imaging element according to claim 8, wherein eachof R₁ and R₂ in the formula (1) or the formula (2) is a phenyl grouphaving a methyl group or an ethyl group.
 10. A photoelectric conversionelement for use in an imaging element, comprising a material for aphotoelectric conversion element for use in an imaging element accordingto claim
 1. 11. A photoelectric conversion element for use in an imagingelement, the photoelectric conversion element having (A) a firstelectrode film, (B) a second electrode film, and (C) a photoelectricconversion portion disposed between the first electrode film and thesecond electrode film, wherein the photoelectric conversion portion (C)comprises at least (c-1) a photoelectric conversion layer and (c-2) anorganic thin-film layer other than the photoelectric conversion layer,and the organic thin-film layer (c-2) other than the photoelectricconversion layer comprises a material for a photoelectric conversionelement for use in an imaging element according to claim
 1. 12. Thephotoelectric conversion element for use in an imaging element accordingto claim 11, wherein the organic thin-film layer (c-2) other than thephotoelectric conversion layer is an electron blocking layer.
 13. Thephotoelectric conversion element for use in an imaging element accordingto claim 11, wherein the organic thin-film layer (c-2) other than thephotoelectric conversion layer is a hole blocking layer.
 14. Thephotoelectric conversion element for use in an imaging element accordingto claim 11, wherein the organic thin-film layer (c-2) other than thephotoelectric conversion layer is an electron transport layer.
 15. Thephotoelectric conversion element for use in an imaging element accordingto claim 11, wherein the organic thin-film layer (c-2) other than thephotoelectric conversion layer is a hole transport layer.
 16. Thephotoelectric conversion element for use in an imaging element accordingto claim 11, further having (D) a thin-film transistor having a holeaccumulation portion and (E) a signal readout portion which reads asignal responding to charge accumulated in the thin-film transistor. 17.The photoelectric conversion element for use in an imaging elementaccording to claim 16, wherein the thin-film transistor (D) having ahole accumulation portion further has (d) a connection portion whichelectrically connects the hole accumulation portion to any one of thefirst electrode film and the second electrode film.
 18. An imagingelement in which a plurality of photoelectric conversion elements foruse in an imaging element according to claim 10 are arranged in an arraypattern.
 19. A photosensor comprising a photoelectric conversion elementfor use in an imaging element according to claim 10.